Toshiba Electronics Europe TK042N65Z5
650V 42mOhm high speed diode MOSFET
TK042N65Z5 is one of the first high-speed diode (HSD) type products in the latest generation DTMOS VI series. It is housed in a TO-247 package. Compared to the standard DTMOS VI products, the TK042N65Z5 achieve a 65% reduction in reverse recovery time (trr) with only 160ns. Also the TK042N65Z5 has reduced reverse recovery charge (Qrr) by 88% and drain cut-off current at high temperatures by up to 90%. These significant improvements reduce power losses of switching equipment, which helps efficiency.
Key features
- Integrated high speed body diode leading to lower loss in hard switching
- Low IDSS at high temperature for high efficiency at low loads
- Low RDS(on) x Qgd trade off
Applications
- Bridge circuit of power supply
- PV Inverter
- UPS
- EV charging station
- Motor inverter
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