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Toshiba Electronics Europe TK042N65Z5

650V 42mOhm high speed diode MOSFET

Toshiba Electronics Europe TK042N65Z5 product image

TK042N65Z5 is one of the first high-speed diode (HSD) type products in the latest generation DTMOS VI series. It is housed in a TO-247 package. Compared to the standard DTMOS VI products, the TK042N65Z5 achieve a 65% reduction in reverse recovery time (trr) with only 160ns. Also the TK042N65Z5 has reduced reverse recovery charge (Qrr) by 88% and drain cut-off current at high temperatures by up to 90%. These significant improvements reduce power losses of switching equipment, which helps efficiency.

 

Key features

  • Integrated high speed body diode leading to lower loss in hard switching
  • Low IDSS at high temperature for high efficiency at low loads
  • Low RDS(on) x Qgd trade off

 

Applications

  • Bridge circuit of power supply
  • PV Inverter
  • UPS
  • EV charging station
  • Motor inverter

 

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