Toshiba 150V N-channel power U-MOS X-H MOSFET
Low voltage MOSFET with improved reverse recovery characteristics that a critical for synchronous rectification applications
TPH1100CQ5 and TPH1400CQ5 based on our U-MOS X-H Trench process, are designed for high-performance switching power supplies and are ideal for data centres and industrial applications. They feature improved reverse recovery characteristics, reducing power loss and enhancing efficiency.
Key features
- Very low trr/Qrr due to intrinsic high-speed diode
- Low Rds(on) MOSFET
- UMOS X process related low-spike switching reducing overshoots
- High channel temperature : 175°C (max)
Applications
- High-efficiency DC-DC converters
- High-efficiency AC-DC converters
- Secondary rectification
- Motor drivers
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