STMicroelectronics silicon carbide MOSFET
Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Key features
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
- Variable frequency drives for motors
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