Power Integrations InnoSwitch™3-EP 900 V GaN 75 W

The versatile InnoSwitch3-EP flyback switcher IC family offers a wide range of voltage rating options, making design easy by allowing engineers to select the best switching technology for their application. Members of the family featuring 900 V gallium-nitride (GaN) technology are now available to order. They deliver up to 100 W with better than 93% efficiency and eliminating the need for heatsinks in space-challenged applications. PI’s proprietary PowiGaN technology provides the reliability and ruggedness required to realize the 900 V rating. Simultaneously increasing power and efficiency, it makes InnoSwitch3-EP ICs ideal for applications such as appliances, three-phase motors and auxiliary power supplies in servers. The 900 V breakdown voltage of the primary MOSFET also means widened safety margin for regions with high or unstable line voltages, and they are pin-for-pin compatible with 725 V and 750 V InnoSwitch3-EP parts, allowing engineers to benefit from the high-performance switching technology without changing the design. All InnoSwitch3-EP devices feature synchronous rectification control and a valley-switching discontinuous conduction mode (DCM) and continuous conduction mode (CCM) flyback controller. FluxLink™ communication technology enables the IC package to bridge the isolation barrier, eliminating the need for optocouplers.

Key features

• Up to 93% full-load efficiency
• Compact package reduces PCB area
• Excellent multi-output cross regulation with weighted secondary side regulation (SSR) feedback and synchronous FETs
• Integrated FluxLink feedback link, HIPOT-tested to ensure good isolation
• Exceptional CV/CC accuracy, independent of external components
• Adjustable accurate output current sense using external resistor
• Auto-restart fault response for output OVP

Applications

• Utility meter and smart grid power supplies
• Industrial power supplies
• Auxiliary, standby and bias power supplies
• Energy storage