onsemi T10 MOSFET, N-Channel, 80V, SO8-FL 5x6
Cutting-edge PowerTrench® T10 technology delivers industry leading RDS, higher power density, reduced switching losses and better thermal performance
New N-Channel Shielded Gate Trench MOSFET from onsemi T10 80V are Gate shielded technology optimized for power applications. The device technology presents superior figure of merits in terms of RDS(on) *A, and RDS(on) * Qg enabling ultra-low RDSON, and CGD. The body diode include an excellent body diode with a soft reverse recovery. Additionally, the MOSFET technology works like having an integrated snubber enabling less ringing under switching applications.
Key features
- Low QRR, soft recovery body diode
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- These devices are Pb−Free, Halogen Free/BFR Free and are RoHS compliant
Applications
- Motor drives
- Solar, UPS
- Telecom power / Telecommunications
- Cloud power, server power, datacenter
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