onsemi Silicon Carbide Schottky diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Key features

• Max junction temperature 175 °C
• Avalanche rated 95 mJ
• High surge current capacity
• Positive temperature coefficient
• No reverse recovery / No forward recovery
• Low V_f @ TJ:175 °C

Applications

• Industrial