onsemi NXH008P120M3F1PG
Silicon Carbide (SiC) module - 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK half bridge topology, F1 package
The NXH008P120M3F1PTG is a power module containing 8 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with Alumina (AL2O3) DBC in an F1 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive. Also available with 10mohm (NXH010P120M3F1PG) and 15mohm (NXH015P120M3F1PTG). The Modules works well with standard NCD5710x driver.
Key features
- Excellent FOM [ = Rdson * Eoss ]
- 15V to 18V gate drive
- 8 mohm / 1200 V M3S SiC MOSFET half−bridge
- Press−Fit Pin
- Options with pre-applied Thermal Interface Material (TIM) and without pre-applied TIM
Applications
- Industrial power
- Energy storage
- Electric vehicle charging stations
- Solar inverter
- UPS
Related partsBuy online and see datasheets:
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