onsemi NCP5892x 650V integrated GaN
High performance integrated gate driver with GaN
Built in 6 V clamped gate drive for optimal and robust GaN operation at high switching frequency. Device is available in low inductance PQFN bottom cool package. Integrating the gate driver into a single package enhances reliability and minimizes parasitic effects.
Key features
- Integrated gate driver + E-mode GaN
- 50 mOhm, 78 mOhm & 150 mOhm typical Rds(on)
- 650 V breakdown voltage rating
- 6 V internal clamped GaN gate drive voltage
Applications
- High performance industrial
- Totem pole PFC and LLC
- Cloud-server & 5G Telecom
- High performance computing
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