NXP Semiconductors GD3162

The GD3162, advanced gate driver designed to drive the latest SiC and IGBT modules for xEV traction inverters.
 

• High integration: Integrated DC Link discharge feature
• Performance and efficiency: Dynamically controlled gate drive strength; Flexibility and Programable features  
• Monitoring and safety: Power device R_DSON & V_TH aging detect; < 1 µ sec SiC Short Circuit  detect & react ; ASIL C/D

Key features

• Dynamic gate strength control - Flexibility and performance Support IGBT&SiC power switches
• Power device aging - Higher vehicle range enabled
• DC link discharge control - System BOM cost and size reduction
• Safety and monitoring - Functional safety in the DNA of NXP

Additional features

Operation and protection:

• Integrated boost capability for increased drive strength: Up to 10 / 20 / 30 A source/sink current
• Max VCC output voltage: 25 V Programmable ADC delay – Up to 8 μs sampling delay from rising or falling edge of PWM
• SPI programmable ISEN/COMP setpoint, to allow the gate driver to automatically control gate drive strength based on high-voltage domain input
• Integrated HV Temperature Sensing (TSENSE) for NTC thermistor or diode sensors with programmable offset and gain
• Fast VCE DeSat detection and reaction time: < 1 µs (for SiC)
• Improved PWM deadtime range for reduced switching losses (for SiC)
• Programmable two-Level Turn off (2 LTO) and soft-shutdown (SSD)
• Provides either MCU controlled or safety logic-controlled gate drive to actively discharge the DC link capacitor
   

Functional Safety:

• Additional programmable fault pin (INTA)
• Integrated HV fault management (FSISO) with Programmable VCE output monitoring
   

Insulation/Isolation:

• Minimum Common-Mode Transient Immunity (CMTI) > 100 V/ns and 5,000 Vrms galvanic isolation per UL 1577 (planned)
   

Package:

• Offered 32-pin wide body SOIC package - 0.65 mm pitch - 7.5 mm x 11 mm x 2.5 mm body

Applications

For Automotive:

• Electric Vehicles (EV): BEV, HEV, PHEV •
• EV Traction Inverter (400V / 800V & IGBT / SiC)
   

For Industrial:

• High-voltage traction inverters
• Electrical 2-wheelers

Available tools

Evaluation and development boards:

• FRDMGD3162HBIEVM GD3162 Half-bridge evaluation kit - Tool summary page
• FRDMGD3162RPEVM - Half-bridge evaluation kit - Tool summary page 
   

Reference designs:

• RDGD3162I3PH5EVB 3 phase inverter reference design using the GD3162 with HybridPACK drive - Tool summary page
• 3-Phase inverter reference design using the GD3162 with BOSCH CSL B-sample SiC B6 pbridge
   

Complete solutions:

• EV power inverter control reference design gen 3
   

Software:

• FlexGUI: software tool for evaluation of reference design kits

Upcoming seminars

On-demand webinars (Sign in required)

EV traction inverter system
https://www.nxp.com/design/training/ev-traction-inverter-system:TIP-EV-TRACTION-INVERTER-SYSTEM

Explore NXP’s third generation of automotive-grade EV power inverter control reference design 800 V Silicon Carbide (SiC)-based traction inverter, which features a full system solution using GD3162 Gate Driver, S32K39 MCU, FS26 System basis chip, TJA146x,TJA1103 CAN interface devices.
 

Electrification: Functional safety concept and collaterals for EV traction inverter
https://www.nxp.com/design/training/electrification-functional-safety-concept-and-collaterals-for-ev-traction-inverter:TIP-ELECTRIFICATION-FUNCTIONAL-SAFETY-INVERTER

Learn about the functional safety collaterals developed by NXP on the EV traction inverter, starting from functional safety concept down to the Hardware and Software levels.