Nisshinbo Micro Devices RP122Z181D

Electronics designers often struggle with the question which LDO type to select for the circuit; one option is an LDO with low current consumption but the performance like ripple rejection and transient response speed are usually not impressive. Another option is a high performance LDO but these have a high internal current consumption even at low output current demand. A smart solution called Seamless LDO technology combines both LDO types and offers 90 dB ripple rejection, fast transient response and 9.5 µA current consumption without load. In practice, the LDO automatically adapts performance based on the output current demand.

Key features

• Fast transient response
• Low current consumption
• Low noise
• High ripple rejection

Additional features

• Input voltage range (max.rating): 1.7 V to 5.25 V (6.0 V)
• Output voltage range: 1.2 V to 4.8 V (0.1 V step)
• Supply current: Typ. 9.5 μA
• Output noise: Typ. 8 μVrms (I_OUT = 250 mA)
• Ripple rejection: Typ. 90 dB (f = 1kHz), Typ. 85 dB (f = 10kHz), Typ. 65 dB (f = 100kHz)
• Dropout voltage: Typ. 0.17 V (I_OUT = 400 mA, V_SET = 2.8 V)
• Protection features: Thermal shutdown protection (Detection Temp. Typ.165°C)
• Inrush current limit at Typ. 250 mA for appr.700 μs period after start-up
• Ceramic capacitor (C_IN, C_OUT): 1.0 μF or more (no need of noise bypass capacitor)
• Package RP122Z: WLCSP-4-P8 (0.64 x 0.64 x 0.36 mm)

Applications

• Mobile phones and tablets
• Digital cameras
• Audio devices
• Battery-powered equipment
• RF modules
• Clock generator: VCO, PLL, etc.
• Noise-sensitive devices: ADC, DAC