Nexperia SiC MOSFET NSF030120D7A0
Raising the bar for safe, robust and reliable power switching
Nexperia today announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values. This announcement follows on from Nexperia’s late-2023 release of two discrete SiC MOSFETs in 3 and 4-pin TO-247 packaging and is the latest offering in a series which will see its SiC MOSFET portfolio swiftly expand to include devices with RDSon values of 17, 30, 40, 60 and 80 mΩ in flexible package options.
Key features
- Excellent RDSon temperature stability
- Very low switching losses
- Fast reverse recovery
- Fast switching speed
- Temperature independent turn-off switching losses
- Very fast and robust intrinsic body diode
- Faster commutation and improved switching due to the additional Kelvin source pin
Applications
- E-vehicle charging infrastructure
- Photovoltaic inverters
- Switch mode power supply
- Uninterruptable power supply
- Motor drives
Product table
| Type number | Qualification | Drain-source breakdown voltage (V) | Drain-source on-state resistance at 15 V (mΩ) | Drain-source on-state resistance at 18 V (mΩ) | ID [max] (A) | Datasheet |
|---|---|---|---|---|---|---|
| NSF030120D7A0 | Industrial | 1200 | 40 | 30 | 67 | NSF030120D7A0 |
| NSF030120D7A0-Q | Automotive | 1200 | 40 | 30 | 69 | NSF030120D7A0-Q |
| NSF040120D7A0 | Industrial | 1200 | 40 | 31 | 65 | NSF040120D7A0 |
| NSF040120D7A1 | Industrial | 1200 | 53 | 40 | 54 | NSF040120D7A1 |
| NSF040120D7A1-Q | Automotive | 1200 | 53 | 40 | 54 | NSF040120D7A1-Q |
| NSF060120D7A0 | Industrial | 1200 | 80 | 60 | 38 | NSF060120D7A0 |
| NSF060120D7A0-Q | Automotive | 1200 | 80 | 60 | 38 | NSF060120D7A0-Q |
| NSF080120D7A0 | Industrial | 1200 | 80 | 64 | 33 | NSF080120D7A0 |
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