Nexperia SiC MOSFET NSF030120D7A0

Raising the bar for safe, robust and reliable power switching

Nexperia today announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ R_DSon values. This announcement follows on from Nexperia’s late-2023 release of two discrete SiC MOSFETs in 3 and 4-pin TO-247 packaging and is the latest offering in a series which will see its SiC MOSFET portfolio swiftly expand to include devices with R_DSon values of 17, 30, 40, 60 and 80 mΩ in flexible package options.

 

Key features

• Excellent R_DSon temperature stability
• Very low switching losses
• Fast reverse recovery
• Fast switching speed
• Temperature independent turn-off switching losses
• Very fast and robust intrinsic body diode
• Faster commutation and improved switching due to the additional Kelvin source pin

 

Applications

• E-vehicle charging infrastructure
• Photovoltaic inverters
• Switch mode power supply
• Uninterruptable power supply
• Motor drives

 

ebv content library/npi/2024/nexperia-sic-mosfet-nsf030120d7a0 Nexperia SiC MOSFET NSF030120D7A0 | EBV Elektronik