Infineon Technologies OptiMOS™ 6 power

The new OptiMOS™ 6 200 V MOSFET family represents Infineon’s state of the art trench MOSFET technology. It addresses the need for high power density, high efficiency, and high reliability. The technology features a significantly reduced R_DS(on) resulting in lower conduction losses. A narrow gate threshold voltage spread and reduced transconductance make the OptiMOS™ 6 200 V a superior device for paralleling. Together with the soft diode behavior and the low reverse recovery charge, in addition to a linearity improvement of output capacitance, the OptiMOS™ 6 200 V provides the lowest switching losses.

Key features

• 42% lower R_DS(on)
• More than 3 times softer diode and improved capacitance linearity
• 89% lower Q_rr
• Improved SOA

Additional features

• Pb-free plating and RoHS compliant

Applications

• Drives
• SMPS
• Solar
• BMS
• Audio