Infineon Technologies CoolSiC™

The CoolSiC™ 2000 V SiC MOSFET family, available in TO-247PLUS-4-HCC package and ranging between 12 - 100 mΩ along with the matching diode portfolio ranging between 10 - 80 A, have been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency for green and efficient energy applications.

Key features

• V_DSS = 2000 V for DC-link systems up to 1500 VDC
• Very low switching losses
• Innovative HCC package
• 14 mm pin to pin creepage

Additional features

• 5.4 mm clearance distances
• Benchmark gate threshold voltage, V_GS(th) = 4.5 V
• Robust body diode for hard commutation
• XT interconnection technology for best-in-class thermal performance
• High humidity robustness

Applications

• Photovoltaic
• Energy storage systems
• EV charging