Infineon Technologies CoolSiC™ MOSFET 650 V
New CoolSiC™ Generation 2 in 650V in a D²PAK-7
The CoolSiC™ MOSFET 650 V G2, available in single digit RDS(on) from 7 mΩ up to 50 mΩ is available in D2PAK-7, TO-247-3 and TO-247-4 package and excels in reliability and ease-of-use, with the highest flexibility in driving voltage. CoolSiC™ MOSFET 650 V G2 builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. The Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Key features
- Excellent figures of merit (FOMs)
- Best in class RDS(on)
- High robustness and overall quality
- Flexible driving voltage range
Additional features
- Support for unipolar driving, VGS(off) = 0
- Best immunity against turn-on effects
- Improved package interconnect with .XT
Applications
- Switched mode power supplies (SMPS)
- Solid state circuit breaker (SSCB)
- EV charging
- PV inverters
- Energy storage systems
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