Infineon Technologies 2ED2388S06F
650 V high speed, half-bridge gate driver
650 V high speed, half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs.
Key features
- Operating voltages (VS node) up to + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode
- 90 ns propagation delay
- Maximum supply voltage of 25 V
Applications
- Connected and smart lighting for IoT
- Home appliances
- LED lighting system designs
- Motor control and driver
- Smart buildings
Related partsBuy online and see datasheets: |
Do you have a Question?
Contact EBV
If you need any assistance, please click below to find your closest EBV sales office.
