Infineon IGBT module, single switch, 1.2 kA, 2.3 V, 2400 kW, 150 °C

The well-known IHV B 4.5 kV single switch IGBT module has been upgraded to our latest chip generation, to meet the current and future requirements for industry applications MVD, T&D and Transportation. It features the TRENCHSTOP™ IGBT4 and emitter controlled diode 4 in the standardized housing of 140 x 190 mm² and is offered as its predecessor with and without the unique S7-feature. Customers can easily switch from the predecessor FZ1200R45HL3 types, thanks to same mechanical and the very close electrical features.

Key features

• Full non truncated (RB-)SOA
• High cosmic radiation stability (100 FIT @ 2900 V)
• High TC (30.000 cycles @ DTc = 80 K) and PC (2 Mio cycles @ DTj =40 K) capability
• Fire and smoke housing material classification according to EN45545-2 R22, R23: HL3
• Low conduction losses at high output RMS currents
• Unique S7-feature offers operation at V_GE = 25 V

Applications

• Drives
• Commercial and agriculture vehicles
• Power transmission and distribution
• Energy storage systems
• Traction