Vishay SiHR080N60E-GE3

New SiHR080N60E 600 V E Series Power MOSFET in Compact Top-Side Cooling PowerPAK^® 8 x 8LR Delivers Industry’s Lowest R_DS(ON)*Q_g FOM, Enables Higher Power Ratings and Density Than D2PAK, and Lowers Conduction and Switching Losses to Increase Efficiency. Its compact 10.42 mm by 8 mm by 1.65 mm PowerPAK 8 x 8LR package features a 50.8 % smaller footprint than the D2PAK, while offering a 66 % lower height. Due to its top-side cooling, the package delivers excellent thermal capability, with an extremely low junction to case thermal resistance of 0.25 °C/W while the package’s gullwing leads provide excellent temperature cycle capability.

Key features

• 4th generation E series 600 V MOSFET Super Junction technology
• Industry-low 3.1 Ω*nC on-resistance times gate charge figure of merit (FOM)
• Reduced conduction and switching losses save energy and increase efficiency
• Compact top side cooling PowerPAK^® 8 x 8LR package can replace D2PAK

Additional features

• 4th generation E series 600 V MOSFET Super Junction technology
• Industry’s lowest combination of on-resistance and total gate charge
• Saves energy and increase efficiency in power systems > 2 kW
• Compact top side cooling PowerPAK^® 8 x 8LR package can replace D2PAK
• Reduced switching and conduction losses increase efficiency

Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
  • High-intensity discharge (HID)
  • Fluorescent ballast lighting
     
• Industrial
  • Welding
  • Induction heating
  • Motor drives
  • Battery chargers
  • Solar (PV inverters)