Vishay 650 V SiC Schottky diodes

Increasing efficiency and reliability for switching power designs, new 4 A to 40 A Gen 3 650 V SiC Schottky diodes feature an MPS design, offer lower forward voltage drop, capacitive charge, and reverse leakage current.

Key features

• Available with forward current from 4 A to 40 A
• Offered in TO-22OAC 2L and TO-247AD 3L through-hole and D2PAK 2L (TO-263AB 2L)
• Low forward voltage drop down to 1.46 V
• Low capacitive charge down to 12 nC

Additional features

• Available with forward current from 4 A to 40 A
• Offered in TO-22OAC 2L and TO-247AD 3L through-hole and D2PAK 2L (TO-263AB 2L) surface-mount packages
• Increase efficiency
• Low forward voltage drop down to 1.46 V
• Low capacitive charge down to 12 nC
• Low reverse leakage current down to 1.3 uA

Applications

• PFC and high frequency rectification in high voltage
• power supplies, and LLC converters for:
• Servers
• Telecom equipment
• UPS
• Solar inverters