Toshiba Electronics Europe TRSxxx65H
SiC 650V Schottky barrier diodes with forward voltage of typ. 1.2V
The 3rd generation 650V SiC Diodes achieve excellent low forward voltage VF of 1.2V (typ). This represents a 17% reduction compared to 2nd generation products. Also the reverse current IR ratio is improved compared to 2nd generation. All of these improvements reduce power dissipation and contribute to higher levels of efficiency within end equipment.
Key features
- Lowest VF 1.2V (typ) in 650V class
- Good trade-off VF vs Qc
- High peak forward surge current IFSM
- Available in IF current options from 4A up to 12A devices
Additional features
Advantages
- Low forward losses
- Low switching losses
Benefits
- High Efficiency
- Less heat generation
- Robust product performance
Packages
- TRSxxE65H are housed in TO-220-2L packages
- TRSxxV65H are provided in compact and flat DFN8×8 SMD packages
Applications
- Switched mode power supply for industrial, server, telecom
- PV-Inverter
- EV charger
- Motor drives (IGBT parallel)
- Power factor control
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