Toshiba Electronics Europe TPH9R00CQ5

New 150V U-MOS X-H MOSFET with high speed body diode

TPH9R00CQ5 is specifically designed for use in high performance switching power supplies. In high performance power solutions that use synchronous rectification, reverse recovery performance is highly important. Due to inclusion of a high speed body diode, the TPH9R00CQ5 reduces the reverse recovery charge by around 74% (to 34nC typ) when compared to an existing device such as the TPH9R00CQH and the reverse recovery time of just 40ns is an improvement of over 40% compared with earlier devices. To support designers, Toshiba has developed a G0 SPICE model for rapid verification of the circuit function as well as highly accurate G2 SPICE models.

 

Key features

• Optimized high-speed body diode
• Low R_DS(ON)
• Low FoM R_DS(ON) x Q_rr and R_DS(ON) x Q_OSS
• High channel temperature 175°C

 

Additional features

Advantages

• Less need for paralleling
• Best in class t_rr and Q_rr
• Reduction of total losses
• Increased thermal headroom

 

Benefits

• Allows compact converter solutions
• Beneficiary in Synchronous Rectifier and Buck Boost high side enabling high power density, thus reducing costs

 

Applications

• Telecom power supply
• Industrial power supply
• Multi level inverter
• DC/DC converter
• Synchronous rectifier

ebv content library/npi/2023/toshiba-electronics-europe-tph9r00cq5 Toshiba Electronics Europe TPH9R00CQ5 | EBV Elektronik