Toshiba Electronics Europe TPH3R10AQM

TPH3R10AQM is a 100V N-channel power MOSFET and based upon Toshiba’s generation U-MOSX-H process. 

Designed for efficient operation, the TPH3R10AQM achieves a value of just 3.1mΩ (max.) for the all-important drain-source On-resistance (R_DS(ON)). This represents a significant 16% improvement over Toshiba’s current 100V product (TPH3R70APL) that uses the established generation process.

The new MOSFET has expanded its safe operating area (SOA) by 76% when compared with the earlier generation which makes it suitable for linear mode operation. This enhancement significantly improves suitability for, and performance in, hot swap circuitry. 

Key features

• Low charges and R_DS(on) : 3,1mOhm (max), 2,5mOhm (typ)
• High Gate threshold voltage
• High T_ch: 175°C
• Suitable for linear mode operation

Additional features

Advantages

• Lower losses
• High V_gs(th) helping to avoid unintended switching
• More thermal headroom in designs
   

Benefits

• Less heat dissipation more power density is possible
• Better reliability of circuit design
• Higher power density is possible

Applications

• DC/DC converter
• Power supply
• Motor drive
• Factory automation