Toshiba Electronics Europe TK055U60Z1

The TK055U60Z1 is based on Toshiba’s latest-generation process with a super junction structure.

The new MOSFET features an R_DS(on) of only 55mΩ – a 13% improvement over similar devices in the company’s established DTMOSIV-H series. In addition, the R_DS(on) x Q_gd, which is the figure of merit for MOSFET performance, is improved by approximately 52%.

The TK055U60Z1 employs the popular TOLL package, which features a Kelvin connection for the signal source terminal. As a result, the source wire's inductance has less impact, reducing switching oscillation, which enhances switching performance when the MOSFET operates at high gating speeds.

Key features

• Low R_DS(on) : 55mΩ (max)
• Low R_DS(on) x Q_gd
• Powerful SMD TOLL package
• Kelvin source Pin

Additional features

Features:

• Typical R_DS(on) of 47mΩ specified at a gate-source voltage of 10V
• Typical total gate charge (Q_g), gate-drain charge (Q_gd) and input capacitance (C_iss) are 65nC, 15nC and 3680pF, respectively. These factors will allow the new device to switch at the fastest possible speeds.
   

Advantages: 

• Decreased switching and conduction losses
• More compact successor for D2Pack
• Kelvin source to reduce impact of parasitic inductance
   

Benefits:

• Less heat generation
• High power density
• Eon & Eoff reduced by use of Kelvin source

Applications

• Power supply
• Uninterruptible Power Supply (UPS)
• PV Power conditioner