Toshiba Electronics Europe GT30J65MRB

The GT30J65MRB is a 60A-rated N-channel IGBT device housed in a TO-3P(N) package and based upon Toshiba’s latest generation technology with an optimized internal trench structure.This significantly enhances switching losses.The improved switching loss allows the upper limit to increase to 60kHz thereby enhancing efficiency and allowing associated passive devices to reduce in size/weight.The demand for switching devices that offer low losses and increased switching frequencies is growing due to the increasing use of inverters in air conditioners and the need to reduce power consumption in large-scale power supplies for industrial equipments.

 
Key features

• 650V / 60A at 25°C (30A at 100°C) rating
• 0.35mJ turn-off switching loss(@ 175ºC)
• Built in diode forward voltage of 1.20V
• Power supplies for industrial equipment

 
Additional features

Advantages

• IGBT offers at least 40% improvement of switching losses vs previous generation product
• Built in diode forward voltage is also 40% lower than previous product
   

Benefits

• Enhanced efficiency of end equipment
• Enhancing efficiency allows associated passive devices to reduce in size / weight, thereby enhancing power density

 
Applications

• Air conditioners
• Home appliances
• Power supplies for industrial equipment