Toshiba Electronics Europe 650V and 1200V SiC MOSFETs

Toshiba's TWxxxZxxxC series includes ten silicon carbide (SiC) MOSFETs based upon their third-generation technology.

TWxxxZxxxC series are housed in a TO-247-4L(X) package with a fourth pin. This allows the provision of a Kelvin connection of the signal source terminal for the gate drive, thereby reducing the parasitic inductance effects of the main Source current path, improving high-speed switching performance. Comparing the TW045Z120C with Toshiba’s existing TW045N120C (3-pin TO-247) shows an improvement in turn-on loss of approximately 40% while the turn-off loss is improved by around 34%.

Key features

• Kelvin-Source package TO-247-4L
• Low R_DS(ON) x Q_gd Figure-of-Merit
• Built-in SiC SBD structure with low V_F
• High V_th and small Q_gd can allow for unipolar gate-driver supply

Additional features

Features

• R_DS(ON) values ranging from 140 down to 15mOhm
• Integrated SiC Schottky Barrier Diode structure for lower losses and reliable operation
• High threshold and low Miller Charger for simpler gate drive
• Fast switching for higher efficiency
   

Advantages

• Improving the parasitic inductance effects
• Enhancing high-speed operation
• Great improvement in turn-on and turn-off loss compared to 3pin device
• Reduced ringing
   

Benefits

• Improving the efficiency and power density
• Less EMI

Applications

• Switching power supplies for servers & data centres
• Electric Vehicle (EV) charging stations
• Photovoltaic (PV) inverters
• (Battery) Energy Storage Systems (B)ESS
• Uninterruptible Power Supplies (UPS)