onsemi SiC MOSFET 1700V
EliteSiC, 960 mohm, TO-247-3L - NTHL1000N170M1
The 1700V M1 planar SiC MOSFETs family is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.
Key features
- Typ. RDS(on) = 960 mΩ
- Ultra low gate charge (typ. QG(tot) = 14 nC)
- Low effective output capacitance (typ. Coss = 11 pF)
- 100% Avalanche tested
Additional features
- RoHS Compliant
Applications
- UPS (Uninterruptible Power Supplies)
- Energy Storage Systems
- Solar
- EV charger
- SMPS (Switch Mode Power Supplies)
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