New Product Introduction

onsemi FGH4L50T65MQDC50

IGBTs - FGH4L50T65MQDC50 - 650V field stop 4th generation mid speed IGBT with co-pack SiC diode

onsemi FGH4L50T65MQDC50 product image

Using the novel field stop 4th generation IGBT and 1.5 generation SiC Schottky Diode technology in TO-247 4-lead package, FGH4L75T65MQDC50 offers the optimum performance with low conduction and switching losses for high-efficiency operations for industrial applications.

 

Key features

  • Positive temperature co-efficient
  • Low Vce(sat)
  • Low Eon and Eoff
  • Smooth and optimized switching

 

Additional features

  • High current capability
  • 100% of the parts are tested for ILM (Note 2)
  • Low saturation voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A
  • No reverse recovery / No forward recovery
  • Tight parameter distribution
  • RoHS Compliant

 

Applications

  • Solar inverter
  • UPS
  • Energy storage system
  • PFC
  • EV Charging station

Related parts

Buy online and see datasheets:



Do you have a Question?

Contact EBV

If you need any assistance, please click below to find your closest EBV sales office.

Links and documents



Related markets



Related technologies