Nexperia GaN FET

Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for either low-power 650 V applications or high-power 150 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. Alternatively low-voltage GaN (150 V) devices enable faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.

Key features

• Enhancement mode transistor-normally off power switch
• Ultra-high switching frequency
• Leading soft-switching performance
• High performance (>99% efficiency)

Additional features

• Enhancement mode transistor-normally off power switch​
• Ultra-high switching frequency​
• Leading soft-switching performance​
• No reverse-recovery charge​
• Low gate charge, low output charge​
• High performance (>99% efficiency)​
• Good tight dynamic characteristics​​
• Easy to drive, 0 to 5 V gate drive
• Qualified for industrial applications according to JEDEC Standards

Applications

• Datacom and Telecom (AC/DC and DC/DC)
• Photovoltaic (PV) micro inverter (DC/AC)
• Industrial (DC/AC)
• BLDC / micro servo motor drives
• LED driver​
• TV power supply unit (PSU)
• 400 V-48 V LLC converter for datacenters
• 48 V to POL direct conversion​
• Power supply (AC/DC) fast charging for e-mobility
• USB-C power delivery fast charging for portables
• LiDAR (non-automotive)​
• Class D audio amplifiers

Low voltage e-mode GaN FETs

650 - 700 V e-mode GaN FETs