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Infineon Technologies P-channel power MOSFETs

P-channel power MOSFETs in SuperSO8 and PQFN 3.3x3.3

Infineon Technologies P-channel power MOSFETs product image

A P-channel MOSFET uses hole flow as the charge carrier, which has less mobility than the electron flow used in N-channel MOSFETs. In functional terms, the main difference is that P-channel MOSFETs require a negative voltage from the gate to the source (VGS) to turn on (as opposed to an N-channel MOSFET, which requires a positive VGS voltage). This makes P-channel MOSFETs the ideal choice for high-side switches. The simplicity of the design is beneficial for low-voltage drives applications and non-isolated POLs, where space is limited. 

 

Key features

  • Available in 2 different packages
  • Wide RDS(on) range
  • Logic level availability
  • Optimized for a wide range of applications

 

Additional features

  • Broad availability at distribution partners
  • Industry standard package
  • Ideal for high and low switching frequency
  • Avalanche ruggedness
  • Easy interface to MCU
  • Improved efficiency at low loads due to low Qf
  • Reduced design complexity
  • Energy efficiency

 

Applications

  • Battery protection
  • Revere polarity protection
  • Linear battery chargers
  • Load switched
  • DC-DC converters
  • On-board charger
  • Motor control
  • Low voltage drive applications

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