Infineon Technologies P-channel power MOSFETs
P-channel power MOSFETs in SuperSO8 and PQFN 3.3x3.3
A P-channel MOSFET uses hole flow as the charge carrier, which has less mobility than the electron flow used in N-channel MOSFETs. In functional terms, the main difference is that P-channel MOSFETs require a negative voltage from the gate to the source (VGS) to turn on (as opposed to an N-channel MOSFET, which requires a positive VGS voltage). This makes P-channel MOSFETs the ideal choice for high-side switches. The simplicity of the design is beneficial for low-voltage drives applications and non-isolated POLs, where space is limited.
Key features
- Available in 2 different packages
- Wide RDS(on) range
- Logic level availability
- Optimized for a wide range of applications
Additional features
- Broad availability at distribution partners
- Industry standard package
- Ideal for high and low switching frequency
- Avalanche ruggedness
- Easy interface to MCU
- Improved efficiency at low loads due to low Qf
- Reduced design complexity
- Energy efficiency
Applications
- Battery protection
- Revere polarity protection
- Linear battery chargers
- Load switched
- DC-DC converters
- On-board charger
- Motor control
- Low voltage drive applications
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