Infineon Technologies OptiMOS™ power MOSFETs

Infineon’s OptiMOS™ low- and medium-voltage power MOSFETs in an innovative and improved PQFN 5x6 mm² Source-Down package are presented to the market. The key feature of the Source-Down package is the orientation of the active side of the silicon chip toward the bottom side of the component. In combination with the reinforced clip on the drain side on top of the silicon chip, package parasitics are significantly reduced and thermal performance is pushed to the next level of improvement.

The OptiMOS™ power MOSFETs 25 V-150 V in PQFN Source-Down 5 x 6 mm² package in Corner-Gate.

Key features

• Cutting edge silicon technology OptiMOS™ with outstanding FOMs
• Source-down package with improved thermal performance and ultra-low parasitics
• Source-down package with maximized chip / package ratio
• Source-down package in center-gate footprint

Additional features

• Lowest possible R_DS(on) on 5 x 6 mm² PCB real-estate

Applications

• Telecom
• Server
• Drones
• Robotics
• Solar
• Low voltage drives
• Light electric vehicles
• Power tools
• Battery management system