Infineon Technologies EasyPACK™ CoolSiC™ modules

Infineon’s range of CoolSiC™ MOSFET power modules open up new opportunities for inverter designers to realize never-before-seen levels of efficiency and power density. When Silicon Carbide (SiC) semiconductors are used as switches, the overall system efficiency is improved by allowing higher operating temperatures and switching frequencies while also supporting high. In addition, Silicon Carbide (SiC) power modules can be tailored to different application needs and are available in topologies from 52.9 mOhm to 1.44 mOhm RDS.

Key features

• Best-in-class packages with 12 mm height
• Combination of leading edge WBG material and Easy module packages
• Very low module stray inductance
• Wide RBSOA

Additional features

• 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
• Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
• Extended maximum gate-source voltages of +23 V and -10 V
• T_{vj op} under overload condition up to 175°C
• Integrated NTC temperature sensor
• Outstanding module efficiency which enables system cost advantages
• System efficiency improvement for reduced cooling requirements
• Enabling higher frequency to increase power density
• Best cost performance ratio which leads to reduced system costs

Applications

• Solutions for photovoltaic energy systems

Available tools 

• EVAL KIT HPD G1 SIC
• EVAL-PS-E1BF12-SIC
• EVAL-FFXMR12KM1DR
• EVAL-M5-E1B1245N-SIC