Infineon Technologies Easy modules CoolSiC™ MOSFET 2B

EasyDUAL™ 1B and 2B CoolSiC™ MOSFET half-bridge modules for 1200 V applications with PressFIT contact technology and integrated NTC temperature sensor. Also available AlN / Al2O3 substrates.

Key features

• Best-in-class packages with 12 mm height
• Leading edge WBG material
• Very low module stray inductance
• CoolSiC™ MOSFET 1200 V

Additional features

• Enhanced CoolSiC™ MOSFET Gen 1
• Enlarged gate drive voltage window from 15 to 18 & 0 to -5 V
• Extended maximum gate-source voltages
• Gate-source voltages of +23 V and -10 V
• T_Vjop up to 175 °C in overload condition to cover failure events and for even higher power density
• Integrated NTC temperature sensor

Applications

• EV charger
• Fuel cell
• UPS