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Infineon Technologies Discrete 650 V TRENCHSTOP™

IGBT7 H7 industrial applications

Infineon Technologies Discrete 650 V TRENCHSTOP™ product image

The TRENCHSTOP™ IGBT7 H7 is a high-power semiconductor for industrial applications. With advanced design and 650 V voltage rating, it offers exceptional performance and reliability. Ideal for solar, energy storage systems, UPS, power supplies and EV charging applications. Supports decarbonization and Industrial 4.0, enabling sustainable energy transition and enhancing industrial processes.

 

Key features

  • Excellent VCE(sat) behavior thanks to the famous TRENCHSTOP™ technology
  • Very soft, fast recovery antiparallel diode
  • Offering Tj(max) of 175°C
  • Optimized for hard switching, two and three level topologies

 

Additional features

  • Highest power density with 150 A rating
  • Lowest conduction losses - lowest VCE(sat)
  • Lowest switching losses (specially using IKZA and IQY – 4pin packages)
  • Humidity robustness under harsh environment pass by Jedec standard
  • Improved EMI performance with new EC7 smooth diode

 

Applications

  • EV charging
  • Uninterruptible Power Supplies (UPS)
  • String Inverter
  • Welding

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