Infineon Technologies CoolSiC™ MOSFET discrete 650V
In TOLL package
CoolSiC™ technology leverages the strong physical characteristics of silicon carbide, adding unique features which increase the device performance, robustness and ease-of-use.
The CoolSiC™ MOSFETs 650 V are built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.
CoolSiC™ in TOLL is used for more power density and easier assembly.
Key features
- Low device capacitances
- Temperature independent switching losses
- Intrinsic diode with low reverse recovery charge
- Threshold-free on-state characteristics
Additional features
- Small form factor
- Low parasitic inductance and lower case temperature
- .XT interconnect for lower Rth and Zth
- Superior GOX reliability
- Low dependency of RDS(on) with temperature
- Works with standard MOSFET gate-driver ICs
Applications
- Energy storage
- Battery fromation
- Solar
- Industrial SMPS
- Telecom
- Server
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