Infineon Technologies CoolGaN™ 600V GIT HEMTs

Infineon’s CoolGaN™ GIT HEMT is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V.

With extensive experience on the semiconductor market, Infineon’s GaN technology brought the e-mode concept to maturity with end-to-end production in high volumes. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market.

 
Key features

• Enhancement mode transistor – normally OFF switch
• Ultra fast switching
• No reverse-recovery charge
• Capable of reverse conduction

 
Additional features

• Low gate charge, low output charge
• Superior commutation ruggedness
• Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22)
• Improved system efficiency
• High power density, small and light design
• Higher operating frequency
• Reduced EMI
• BOM and overall cost savings
• Highest reliability

 
Applications

• Industrial SMPS
• Telecom SMPS
• Datacenter SMPS
• Low power SMPS
• Charger / Adapter