Infineon Technologies CoolGaN™
CoolGaN™ Integrated Power Stage (IPS) half-bridge 600 V in QFN 8 x 8 mm
Infineon's CoolGaN™ Integrated Power Stage (IPS) is built upon the solid foundation set by Infineon's highly efficient CoolGaN™ technology. By combining the unmatched robustness of the hybrid-drain-embedded gate injection transistor (HD-GIT) structure with integrated precise EiceDRIVER™ gate driver technology, Infineon brings GaN technology to the next level. This results in a smaller physical footprint and increased power density andhigher energy efficiency.
Key features
- Isolated digital input with digital-in, power-out building block
- Application configurable switching behavior
- Fast, highly accurate, and stable timing
- Thermally enhanced 8 x 8 mm QFN-28
Additional features
- Easy to drive with 2x digital PWM input
- Low system BOM
- Complete configurability of gate path via simple RC interface
- Allows short dead-time setting to maximize system efficiency
- Small package for compact system designs
Applications
- USB-PD
- Charger and adapters
- Server, telecom & networking SMPS
- Low power motor drive
- LED lighting
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