New Product Introduction

Infineon Technologies CoolGaN™

CoolGaN™ Integrated Power Stage (IPS) half-bridge 600 V in QFN 8 x 8 mm

Infineon Technologies CoolGaN™ product image

Infineon's CoolGaN™ Integrated Power Stage (IPS) is built upon the solid foundation set by Infineon's highly efficient CoolGaN™ technology. By combining the unmatched robustness of the hybrid-drain-embedded gate injection transistor (HD-GIT) structure with integrated precise EiceDRIVER™ gate driver technology, Infineon brings GaN technology to the next level. This results in a smaller physical footprint and increased power density andhigher energy efficiency.

 

Key features

  • Isolated digital input with digital-in, power-out building block
  • Application configurable switching behavior
  • Fast, highly accurate, and stable timing
  • Thermally enhanced 8 x 8 mm QFN-28

 

Additional features

  • Easy to drive with 2x digital PWM input
  • Low system BOM
  • Complete configurability of gate path via simple RC interface
  • Allows short dead-time setting to maximize system efficiency
  • Small package for compact system designs

 

Applications

  • USB-PD
  • Charger and adapters
  • Server, telecom & networking SMPS
  • Low power motor drive
  • LED lighting

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