Infineon Technologies 1200 V TRENCHSTOP™ IGBT7 S7

Hard-switching 1200 V, 8-120 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low V_CEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter-controlled diode helps to minimize switching losses contributing to overall low total losses.

 
Key features

• Very low V_CEsat
• Good controllability
• Full rated freewheeling diode with improved softness
• Robustness against harsh condition and HV-H3TRB

 
Additional features

• 8 µs short circuit time
• Very tight parameter distribution
• Maximum operating T_j of 175°C
• Lowest losses on IGBT, high system efficiency for higher power output
• Higher power density without heatsink redesign
• Fast and easy replacement of predecessor T2 portfolio
• High device reliability in harsh operating condition
• Ease to design to meet EMI requirement

 
Applications

• Motor control and drives
• Uninterruptible Power Supplies (UPS)