Vishay SIHK045N60E

Designed to provide high efficiency for telecom, server, and power supply applications, the Siliconix n-channel SiHK045N60E slashes on-resistance by 27% compared with previous-generation 600 V E Series MOSFETs while delivering 60% lower gate charge. This results in what Vishay claims is the industry's lowest gate charge times on-resistance for devices in the same class, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications. Built on Vishay's latest energy-efficient E Series superjunction technology, the SiHK045N60E features low typical on-resistance of 0.043Ω at 10V and ultra-low gate charge down to 65nC.

Key features

• FOM of 2.8 Ω*nC is 3.4 % lower than the closest competing MOSFET in the same class
• Low effective output capacitance Co(er) of 117 pF
• Thermal resistance RthJC of 0.45 °C/W is 11.8 %
• Withstand overvoltage transients with guaranteed limits through 100 % UIS testing

Additional features

• 4th generation E series technology
• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er))
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)

Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
  • High-intensity discharge (HID)
  • Fluorescent ballast lighting
• Industrial
  • Welding
  • Induction heating
  • Motor drives
  • Battery chargers
  • Solar (PV inverters)