Toshiba Electronics Europe TPH9R00CQH

TPH9R00CQH uses the latest generation U-MOSX-H process to significantly reduce losses. Additionally, voltage spikes between the Drain and Source during switching have been reduced, thereby improving EMI performance within switching power supplies.

Through careful optimization of the device structure charge characteristics have been improved. With a total gate charge of 44nC and a gate switch charge of 11.7nC the device offers excellent performance, especially in high-speed applications. It is available in the surface mount package SOP Advance(N) 4.9mm x 6.1mm.

Key features

• Very low R_DS(ON)
• Low spike switching
• Low FoM R_DS(ON) x QSW and R_DS(ON) x Q_OSS
• High channel temperature 175°C

Additional features

Advantages:

• Less need for paralleling
• Improved EMI
• Reduction of total losses
• Increased thermal headroom
   

Benefits:

• Allows compact converter solutions
• Reduced effort to remove EMI effects
• Enabling high power density, thus reducing costs

Applications

• High-Efficiency DC-DC converters
• Switching voltage regulators
• Motor drivers