onsemi EliteSiC MOSFET NTH4L028N170M1

The new family of 1700V M1 planar EliteSiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.

Key features

• Typ. R_DS(on) = 28 m @ V_GS = 20 V
• Ultra low gate charge (Q_G(tot) = 200 nC)
• High speed switching with low capacitance (C_oss = 200 pF)
• 100% avalanche tested

Additional features

• PB-free 
• RoHs compliant

Applications

• UPS
• Solar inverter
• Medium voltage grid equipment
• Energy storage system
• Hydrogen electrolyzer
• Fuel cells
• Solid state transformer