onsemi EliteSiC MOSFET, 650V, 42mΩ

The new generation of EliteSiC MOSFETs employ a novel active cell design combined with advanced thin wafer technology enabling best in class figure of merit R_SP (R_DS(on)*area) for 650 V breakdown voltage.  An internal gate resistor (R_G) allows more flexibility eliminating the need to slow down devices artificially with external gate resistors.

Key features

• Best in class figure of merit R_SP (R_DS(on)*area) for 650V
• Avalanche capability & short circuit robustness
• Large Gate usable voltage V_gs: +15V-18V/-5V
• Low internal gate resistor(R_G)

Additional features

Benefits: 

• High efficiency
• Enhanced ruggedness, high reliability and longer device lifetimes
• Compatible with competition
• Zero Volt turn off and with +15V/+18V turn on voltage
• Customer can really tune make a compromise between speed losses and the  EMI

Applications

• DC-DC Converter
• Boost Inverter