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onsemi EliteSiC module 1200 V

NXH020P120MNF1: EliteSiC module, 2-PACK half bridge topology, 1200 V, 20 mohm EliteSiC M1 MOSFET

onsemi EliteSiC module 1200 V product image

The NXH020P120MNF1 is a EliteSiC MOSFET module containing a 20 mohm 1200V EliteSiC MOSFET half bridge and an NTC thermistor in an F1 module.

 

Key features

  • Recommended gate voltage 18V - 20V
  • Low thermal resistance
  • Options for TIM or no TIM
  • Improved RDS(ON) at higher voltage

 

Additional features

  • Improved efficiency or higher power density
  • Flexible solution for high reliability thermal interface

 

Applications

  • Electric vehicle charger
  • Energy storage system
  • Solar inverter 3-phase
  • Uninterruptible power supply

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Related parts

  • NXH020P120MNF1PTG
  • NXH020P120MNF1PG


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