onsemi N-channel power mosfet 600V

SUPERFET III MOSFET is onsemi brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

Key features

• Ultra low gate charge (Typ. Q_g = 252 nC)
• Low time related output capacitance (Typ. Coss(tr.) = 3174 pF)
• Optimized capacitance
• Excellent body diode performance (low Q_rr, robust body diode)

Additional features

• Ultra low gate charge (Typ. Q_g = 252 nC)
• Low time related output capacitance (Typ. Coss(tr.) = 3174 pF)
• Optimized capacitance
• Excellent body diode performance (low Q_rr, robust body diode)
• 650 V @ TJ = 150 °C
• Typ. R_DS(on) = 15.2 mΩ
• 100% Avalanche tested
• These devices are Pb−Free, halogen Free/BFR Free and are RoHS compliant
• Internal gate resistance: 3.5 Ω

Applications

• Industrial
• Telecommunication
• Cloud Systems