onsemi N-Channel MOSFET 100V

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.

Key features

• Shielded Gate MOSFET Technology
• Max RDS(on) = 3.5 mΩ at VGS = 10 V, ID = 50 A
• Max RDS(on) = 5.8 mΩ at VGS = 6 V, ID = 30.5 A
• 50% lower QRR than other MOSFET

Additional features

• Lowers switching noise/EMI
• MSL1 robust package design
• 100% UIL tested
• RoHS Compliant
• Very Low FOM (RDS(on)*QOSS)

Applications

• Motor Drive
• Power Supplies