onsemi isolated gate driver NCD57080
Isolated high current gate driver for high system efficiency
NCD57080A, NCD57080B and NCD57080C are high−current single channel IGBT gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57080A), negative power supply (NCD57080B) and separate high and low (OUTH and OUTL) driver outputs (NCD57080C) for system design convenience. NCD57080 (A/B/C) accommodate wide range of input bias voltage and signal levels from 3.3V to 20V. NCD57080 (A/B/C) are available in narrow-body SOIC-8 package.
Key features
- High Peak output current (+6.5 A/-6.5 A)
- 3.75 KVrms on-chip galvanic isolation
- Tight UVLO thresholds for bias flexibility
- Short propagation delays with accurate matching
Additional features
- High transient & electromagnetic immunity
- Wide bias voltage ranges and input voltage range
- Active miller clamp or negative gate voltage or split outputs
Benefits:
- Improves system efficiency
- Improves PWM signal integrity
- Ruggedness in fast slew rate high voltage and high current switching applications
- Saves cost and board space while offering improved performance compared to opto-drivers
- Offers system design flexibility and allows the usage of commonly available system voltage rails
- Offers a choice in selecting the right feature in a compact package
Applications
- Motor control
- UPS
- HVAC
- Solar inverters
Related partsBuy online and see datasheets: |
Do you have a Question?
Contact EBV
If you need any assistance, please click below to find your closest EBV sales office.
Links and documents |
Related markets |
Related technologies |