onsemi EliteSiC MOSFET - 1200 V
NTBG014N120M3P - 1200 V, 14 mohm, D2PAK
The new family of 1200V M3P planar SiC MOSFETs is optimized for power applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
NTH4L014N120M3P is in TO-247-4L package, while NTBG014N120M3P is in TO-247-7L package.
Key features
- New M3P technology: 14mohm RDS(ON) with low EON and EOFF losses
- 15V to 18V Gate drive
- Typ. RDS(on) = 14 m @ VGS = 18 V
- Low Switching Losses (Typ. EON 1308 J at 74 A, 800 V)
Additional features
- 100% Avalanche tested
- These devices are RoHS compliant
Applications
- Solar inverters
- Electric vehicle charging stations
- UPS (Uninterruptible Power Supplies)
- Energy storage systems
- SMPS (Switch Mode Power Supplies)
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