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onsemi 5 kVRMS Isolated Gate Driver

Dual Channel 4.5/9 A - NCP51561DBDWR2G

ON Semiconductor N-Channel MOSFET 100V product image

The NCP5156DBDWR2G is an isolated dual-channel gate driver with up to 4.5-A/9-A source and sink peak current. It is designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches, offering short and matched propagation delays. Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1200 VDC.

 

Key features

  • 4.5-A Peak Source, 9-A Peak Sink Output Current Capability
  • Propagation Delay Typical 36 ns with 8 ns Max Delay Matching per channel
  • User Programmable Dead-Time
  • 5 kVRMS Galvanic Isolation from input to each output
     

Additional features

Benefits:

  • Improve efficiency and allow direct drive of high-power switches
  • Very good signal integrity and fit with fast switching speed applications
  • Allow full control of output behavior according to selected topologies
     

Applications

  • EV-Charging
  • Motor Drive
  • Solar Inverter

 

Available tools

Evalutation Boards: NCP/NCV51561 EVB OPN

NCP-NCV51561D2PAK7LGEVB
used part: NCP51561DBDWR2G

NCP-NCV51561TO2473LGEVB
used partNCP51561BBDWR2G

NCP-NCV51561TO2474LGEVB
used part: NCP51561BBDWR2G

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