onsemi EliteSiC Mosfet M3S Family 1200V

The new family of 1200V M3S planar EliteSiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

Key features

• TO247-4LD package for low common source inductance
• 15V to 18V Gate Drive
• New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
• 100% Avalanche tested

Additional features

• Reduced EON losses
• 18V for best performance; 15V for compatibility with IGBT driver circuits
• Improved power density
• Improved robustness to unexpected incoming voltage spikes or ringing

Applications

• UPS
• EV-Charging
• Energy storage systems
• Solar inverters
• AC-DC conversion
• DC-AC conversion
• DC-DC conversion