NXP Semiconductors GD3160 gate driver

NXP’s GD3160 is an improved, advanced single-channel high-voltage isolated gate driver with enhanced features for driving and protecting silicon carbide (SiC) MOSFETs with functional safety.

The GD3160's SPI programmable drive, protection and fault reporting features allow users to optimize conditions for driving and protecting almost any SiC MOSFET or Si IGBT power switch.

ISO 26262 compliant and automotive qualified, the GD3160 gate driver integrates BOM saving and functional safety features to support implementing ASIL D compliant and power density efficient xEV inverter solutions.

Key features

• HV Isolated IGBT & SiC Single gate driver IC / isolation up to 8 kV
• Compatible with 200 V to 1700 V IGBT/SiC, power range > 125 kW
• SPI interface for safety monitoring, configuration, and diagnostic reporting
• High gate current integrated: 15 A source/sink capable

Additional features

• Operation
  • ±15 A split output gate current drive
  • Programmable HV VCC regulator output: 14 V to 21 V, 1 V step
  • Max VCC output voltage: 23 V
    
     
• Protection
  • Integrated HV temperature sensing (TSENSE) for NTC thermistor or diode sensors with programmable offset and gain
  • Faster VCE DeSat detection and reaction time: < 1.2 µs (SiC)
  • Improved PWM deadtime range for reduced switching losses (SiC)
  • Programmable two-level turn off (2LTO) and soft-shutdown (SSD)
    
     
• Functional Safety
  • Additional programmable fault pin (INTA)
  • Integrated HV fault management (FSISO)
  • Programmable VCE output monitoring
    
     
• Insulation/Isolation
  • Minimum common mode transient immunity (CMTI) > 100 V/ns
  • 5,000 Vrms galvanic isolation per UL1577 (planned)

Applications

• EV Power Inverter
• Hybrid Electric Vehicle (HEV) Applications
• Motor Drives

Available tools

• Evaluation and Development board
  • Ref: FRDMGD31RPEVM
• Half Bridge Eval kit :
  • Ref : FRDMGD3160DSBHB