Nexperia new SD card level translator

The NXS0506UP Housed in a 16-bump wafer-level chip-scale package the SD 3.0-compliant bi-directional dual voltage level translator has a footprint measuring 1.45mm x 1.45mm x 0.45mm, 0.35mm pitch, 40% smaller than previous 20 bump devices. The NXS0506UP is designed to operate at clock frequencies of up to 208 MHz and data rates of up to 104 Mbps.

The NXS0506UP SD3.0 compliant card level translator also features integrated pull-up and pull-down resistors, providing direct connection to latest host CPU/SOC ASICs, and is easy to use because DATA and CMD channels are swappable without impacting functionality.

Key features

• SD 3.0-compliant bi-directional dual voltage level translator
• Features integrated auto-direction control, EMI filter and IEC  61000-4-2 ESD protection
• Supports the ultra-high speed SDR104 mode
• Features integrated pull-up and pull-down resistors to reduce the BOM cost

Additional features

• Supports up to 208 MHz clock rate
• SD 3.0 specification-compatible voltage translation to support: SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed and Default-Speed modes
• 1.1 V to 1.95 V host side interface voltage support
• Auto-direction sensing
• Low power consumption
• Integrated pull-up resistors: no external resistors required
• Integrated EMI filters suppress higher harmonics of digital I/Os
• Level shifting buffers keep ESD stress away from the host (zero-clamping concept)
• 16-bumps WLCSP package; pitch 0.35 mm
• ESD protection:HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
• CDM ANSI/ESDA/JEDEC JS-002 Class C3 exceeds 1 kV
• IEC61000-4-2, level 4, contact discharge on all memory card-side pins exceeds 8 kV
• IEC61000-4-2, level 4, air discharge on all memory card-side pins exceeds 15 kV
• Specified from -40 °C to +85 °C

Applications

• Consumer devices
• Smartphone handsets, notebooks, game pads
• Cameras and wireless access points
• Home medical devices and automotive systems