Infineon Technologies x16 256-Mbit HYPERRAM™

HYPERRAM™ is a high speed, low pin count, low power self refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes.

HYPERRAM™ 3.0 supports an extended version of the HYPERBUS™ interface. Enabled by a 16-bit I/O, HYPERRAM™ 3.0 offers a read / write bandwidth of up to 800 MBps in DDR mode. It comes in a 49-ball BGA package and offers an extended operating temperature range (-40°C to +105°C). Industrial & extended industrial temperature grades are currently available. These products support 1.8 V option.

Key features

• Operating voltage range: 1.7 V - 2.0 V
• HYPERBUS™ extended I/O (16-bit)
• Access time: 35 ns (max), Clock rate: 200 MHz
• Double data rate (DDR) read / write bandwidth: 800 MBps

Additional features

• Configurable burst modes (linear burst, wrapped length burst and hybrid burst)
• Configurable output drive strength
• Deep power down :12 μA (max) and hybrid deep sleep: 140 µA at 85º C
• Partial memory array refresh feature to optimize battery performance
• Package: 49-ball BGA 8 mm x 8 mm
• Densities: 256 Mb

Benefits

• High performance - doubles throughput from existing HYPERRAM™ devices to 800 MBps
• Small package - ensures lower footprint on board
• Low power - suitable for battery operated applications

Applications

• Machine vision
• Factory automation